METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING HAFNIUM AND ZIRCONIUM-BASED PRECURSORS

摘要

by atomic layer deposition on a metal-containing film forming method it is provided. The method includes passing at least one precursor to a substrate, the structure of one or more precursors are shown in formula II: Where, M is Hf or Zr, and; R is C ₁ -C ₆ alkyl; n is 0, 1, 2, 3, 4, or 5; L, C ₁ -C ₆ is alkoxy. Further, by liquid injection atomic layer deposition is provided a method of forming a film containing metal. The method includes passing at least one precursor to a substrate, the structure of the at least one precursor, such as formulas III, the metal-containing film-forming method: Where, M is Hf or Zr, and; R is C ₁ -C ₆ alkyl; n is 0, 1, 2, 3, 4, or 5; L is amino, wherein amino is optionally independently C ₁ -C ₆ alkyl is optionally substituted once or twice.