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INTEGRATED CIRCUIT WITH PHASE-CHANGE MEMORY CELLS AND METHOD FOR ADDRESSING PHASE-CHANGE MEMORY CELLS
INTEGRATED CIRCUIT WITH PHASE-CHANGE MEMORY CELLS AND METHOD FOR ADDRESSING PHASE-CHANGE MEMORY CELLS
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机译:具有相变存储器单元的集成电路以及用于寻址相变存储器单元的方法
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摘要
The present invention relates to integrated circuit comprising a plurality of bitlines (bl) and a plurality of word-lines (wl) as well as a plurality of memory-cells (MC) coupled between a separate bit-line/word-line pair of the plurality of bit-lines (bl) and wordlines (wl) for storing data in the memory cell. Each memory cell (MC) comprises a selecting unit (T) and a programmable resistance (R). The value of the phase-change resistance (R) is greater than the value of a first phase-change resistance (Ropt) defined by a supply voltage (Vdd) divided by a maximum drive current (Im,) through said first phase-change resistor (Ropt).
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