The invention relates to a detector material for a detector for use in CT systems, particularly in dual-energy CT systems, comprising a doped semiconductor. The invention is characterized in that the semiconductor is doped with a donator in a concentration, wherein the concentration of the donator corresponds to at least 50% of the maximum solubility thereof in the semiconductor material, and the donator produces flat imperfections having an excitation energy ED. The flat imperfections can be ionized and can provide additional freely moveable charge carriers. Said freely moveable charge carriers can be captured by the spatially separated deep imperfections and thus reduce the number of the charged deep imperfections. In this way, pure time- and radiation-dependent effects, such as polarization, occur more often. The invention furthermore relates to the use of said detector material in a CT or dual-energy CT system for generating tomographic images of a test object.
展开▼
