Direct-converting x-ray detector for use in computed tomography system, has doped semiconductor material formed as detector material i.e. indium phosphide, where detector material is doped with element of auxiliary group of periodic system

摘要

The detector has a doped semiconductor material formed as a detector material i.e. indium phosphide, where the detector material is doped with an element of an auxiliary group of a periodic system. The element is selected from one of iron, osmium, and ruthenium. Thickness of the detector material is from 1.2 mm to 3.0 mm. The detector material is built from two layers, where total thickness of the layers lies between from 1.2 mm to 3.0 mm. Total thickness of the layers lies between from 1.4 mm to 2.4 mm. Breakdown field strength of the indium phosphide is 100 kilo volts/cm.