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STRUCTURE FOR OPTICAL STORAGE OF INFORMATION AND METHOD OF OPTIMIZING PRODUCTION OF THIS STRUCTURE

机译:信息的光学存储结构和优化此结构生产的方法

摘要

The invention relates to a high-resolution optical storage structure possessing an information storage capacity (Cst) and comprising: a substrate (10) comprising physical marks (Ms) whose geometric configuration defines the item of information recorded, the smallest physical marks (2T) exhibiting a length on substrate (Ls) and a width on substrate (ls); a superposition of at least one first layer (111) and of a second layer termed active (112) on the surface of the said substrate comprising the physical marks, so as to create information marks (Mopt) ensuring the information storage capacity at the level of the second active layer, of optimal length (Lopt) and of so-called optimal width (lopt) characterized in that: the length on substrate of the marks complies with the following condition: Ls = a Lopt + b the width on substrate of the marks complies with the following condition: ls = c lopt + d with a and c being between about 0.5 and 1 b and d being between about 30 and 80 nanometres and Lopt and lopt being between 0 and about 160 nanometres. The subject of the invention is also a method of optimizing production of the optical storage structure.
机译:具有信息存储容量(Cst)的高分辨率光学存储结构技术领域本发明涉及一种具有信息存储容量(Cst)的高分辨率光学存储结构,其包括:基板(10),其包括物理标记(Ms),其几何结构限定了所记录的信息项;最小的物理标记(2T)。在基板上显示出长度(Ls),在基板上显示出宽度(ls);所述至少一个第一层(111)和第二层(称为活性层(112))在所述包含物理标记的基板表面上的叠置,以创建确保该级别的信息存储容量的信息标记(Mopt)最佳长度(Lopt)和所谓最佳宽度(lopt)的第二有源层的特征在于:标记在基板上的长度符合以下条件:Ls = a Lopt + b这些标记符合以下条件:ls = c lopt + d,其中a和c在大约0.5到1 b之间,d在大约30到80纳米之间,Lopt和lopt在0到大约160纳米之间。本发明的主题还是一种优化光学存储结构的生产的方法。

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