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Indium target for sputtering device and assembly and method for producing such indium targets
Indium target for sputtering device and assembly and method for producing such indium targets
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机译:用于溅射装置的铟靶以及用于制造这种铟靶的组件和方法
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摘要
The indium-target comprises a flat cooling body (2) with a recess (5, 6) connected with a coolant circuit, where the recess is filled with indium. The indium extends itself from a side of the cooling body over its total width and length. The cooling body is equipped below the sputtering trench formed in usage of the indium-target under each recess congruent in the depth. The cooling device is formed in the form of cooling channels (8) connected with the cooling body. The cooling channels are arranged at the lower side of the cooling body. The indium-target comprises a flat cooling body (2) with a recess (5, 6) connected with a coolant circuit, where the recess is filled with indium. The indium extends itself from a side of the cooling body over its total width and length. The cooling body is equipped below the sputtering trench formed in usage of the indium-target under each recess congruent in the depth. The cooling device is formed in the form of cooling channels (8) connected with the cooling body. The cooling channels are arranged at the lower side of the cooling body. The side walls of the recess are formed in step-like manner. The middle line of the stepping forms the form of sputtering trench (3, 4). A web is formed between two recesses, which are produced by milling or form milling. The cooling channels have a rectangular cross-section and are connected with the cooling body. The cooling channel, the cooling body and the casting frame consist of good heat conducting material such as copper. The cooling channels are soldered with the cooling body, extend itself over its total length and are divided into two cooling circuits. The inlet and outlet of the cool water are arranged in the middle between both cooling circuits. Independent claims are included for: (1) an arrangement for the production of ultra fine-grained indium-targets; and (2) a method for the production of ultra fine-grained indium-target.
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