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Indium target for sputtering device and assembly and method for producing such indium targets

机译:用于溅射装置的铟靶以及用于制造这种铟靶的组件和方法

摘要

The indium-target comprises a flat cooling body (2) with a recess (5, 6) connected with a coolant circuit, where the recess is filled with indium. The indium extends itself from a side of the cooling body over its total width and length. The cooling body is equipped below the sputtering trench formed in usage of the indium-target under each recess congruent in the depth. The cooling device is formed in the form of cooling channels (8) connected with the cooling body. The cooling channels are arranged at the lower side of the cooling body. The indium-target comprises a flat cooling body (2) with a recess (5, 6) connected with a coolant circuit, where the recess is filled with indium. The indium extends itself from a side of the cooling body over its total width and length. The cooling body is equipped below the sputtering trench formed in usage of the indium-target under each recess congruent in the depth. The cooling device is formed in the form of cooling channels (8) connected with the cooling body. The cooling channels are arranged at the lower side of the cooling body. The side walls of the recess are formed in step-like manner. The middle line of the stepping forms the form of sputtering trench (3, 4). A web is formed between two recesses, which are produced by milling or form milling. The cooling channels have a rectangular cross-section and are connected with the cooling body. The cooling channel, the cooling body and the casting frame consist of good heat conducting material such as copper. The cooling channels are soldered with the cooling body, extend itself over its total length and are divided into two cooling circuits. The inlet and outlet of the cool water are arranged in the middle between both cooling circuits. Independent claims are included for: (1) an arrangement for the production of ultra fine-grained indium-targets; and (2) a method for the production of ultra fine-grained indium-target.
机译:铟靶包括平坦的冷却体(2),该平坦的冷却体(2)具有与冷却剂回路连接的凹部(5、6),其中该凹部填充有铟。铟自身从冷却体的侧面在其总宽度和长度上延伸。冷却体被装备在在使用铟靶时形成的溅射沟槽的下方,该溅射沟槽在深度上一致的每个凹部下方。冷却装置形成为与冷却体连接的冷却通道(8)的形式。冷却通道布置在冷却体的下侧。铟靶包括平坦的冷却体(2),该平坦的冷却体(2)具有与冷却剂回路连接的凹部(5、6),其中该凹部填充有铟。铟自身从冷却体的侧面在其总宽度和长度上延伸。冷却体被装备在在使用铟靶时形成的溅射沟槽的下方,该溅射沟槽在深度上一致的每个凹部下方。冷却装置形成为与冷却体连接的冷却通道(8)的形式。冷却通道布置在冷却体的下侧。凹部的侧壁以阶梯状形成。阶梯的中线形成溅射沟槽(3、4)的形式。在两个凹槽之间形成网,该两个凹槽通过铣削或成型铣削而产生。冷却通道具有矩形横截面并且与冷却体连接。冷却通道,冷却体和铸造框架由良好的导热材料(例如铜)组成。冷却通道与冷却体焊接在一起,在其整个长度上延伸,并分为两个冷却回路。冷却水的入口和出口位于两个冷却回路之间的中间。包括以下方面的独立权利要求:(1)生产超细晶粒铟靶的装置; (2)超细粒铟靶的制造方法。

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