METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MANUFACTURED THEREBY FOR FORMING NITRIDE FILM IN GATE SIDE WALL ONLY

摘要

PURPOSE: A method for manufacturing a semiconductor device and the semiconductor device manufactured thereby are provided to improve an electrical characteristic and the reliability of a device by preventing the substrate or the gate insulating layer from being damaged by the hydro plasma.;CONSTITUTION: A gate insulating layer is formed on the substrate. A gate pattern is formed on the gate insulating layer. The gate pattern includes the polysilicon layer and the metal layer(150). The nitride film(220) covers the whole sidewall of the gate pattern, the upper side of the gate pattern and the top of the substrate in which the gate pattern does not locate. The oxide films(311, 312) are formed by anisotropic oxidizing the nitride film by the plasma. The plasma contains the oxygen but does not contain the hydrogen.;COPYRIGHT KIPO 2010