e-beam projection lithography for the emitter and its working methods and manufacturing methods

摘要

Electron beam projection lithography for the emitter and its manufacturing method and operating method are disclosed. The disclosed emitter, is formed on the back surface of the photoconductor substrate and the photoconductor front insulating layer and, formed on the insulating layer, the entire relatively patterned to have a thin portion and a thick portion gate electrode layer and a photoconductive substrate formed on a substrate transparent It is provided with a base electrode layer made of a conductive material. In the emitter, when converting the voltage between the base electrode layer and the gate electrode layer is applied and the side of the back surface of the emitter light by irradiating light to a portion of the entire substrate conductor a portion of the photoconductor layer substrate, of the photoconductor substrate optical the electrons are emitted only partially investigated. This according to the present invention, it is possible from the emitter part of the electron emission, a full-scale after the first patterned partial correction or compensation is possible.