首页>
外国专利>
METHOD FOR MANUFACTURING A LITHOGRAPHY MASK AND A FINE PATTERN FORMING METHOD USING THE SAME, CAPABLE OF FACILITATING A FINE PATTERN OF A SUBMICRON SCALE
METHOD FOR MANUFACTURING A LITHOGRAPHY MASK AND A FINE PATTERN FORMING METHOD USING THE SAME, CAPABLE OF FACILITATING A FINE PATTERN OF A SUBMICRON SCALE
展开▼
机译:制造光刻掩模的方法和使用相同方法形成精细图案的方法,能够形成亚微米级的精细图案
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A method for manufacturing a lithography mask and a fine pattern forming method using the same are provided to prevent the deterioration of the resolution due to diffraction by forming a metal thin film pattern on an uneven surface of a transparent polymer layer.;CONSTITUTION: An unevenness pattern(12) is formed on one side of a first substrate(11). A transparent polymer layer is formed on one side of the first substrate. An uneven pattern is transferred on one side of the transparent polymer layer. The transparent polymer layer with the uneven surface is separated from the first substrate. A metal thin film(15) is deposited on the uneven surface of the transparent polymer layer. An adhesive film(26) is formed on a second substrate(21). The adhesive film and the metal thin film are partially bonded. The transparent polymer layer is separated from the second substrate. The metal thin film pattern is formed on an uneven surface of the transparent polymer layer.;COPYRIGHT KIPO 2010
展开▼