COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR(CMOS) FIELD-EFFECT TRANSISTOR HAVING DUAL WORK FUNCTION GATE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A CMOS transistor with a dual work function gate and a method for manufacturing the same are provided to reduce at least two steps of a lithography process by forming an NMOS transistor and a PMOS transistor gate symmetrically by spacer etching method. CONSTITUTION: A semiconductor substrate(100) is divided into a first area(140a) and a second area(150a). An NMOS transistor is formed in the first area. A PMOS transistor is formed in the second area. The NMOS transistor includes a first gate pattern(125), a second gate pattern(135), a source/drain area of n-type and an NMOS gate. The first gate pattern and the second gate pattern are in the form of spacer shapes. The source/drain region of n-type is formed in the both side of the NMOS gate of the semiconductor substrate. The PMOS transistor includes a PMOS gate and a source/drain region of p-type formed in the both side of the PMOS gate of the semiconductor substrate.