Method of Manufacturing Metal Oxide Semiconductor Field-Effect Transistor Having Dual Work Function Gate

摘要

PURPOSE: A metal oxide semiconductor field-effect transistor having a dual work function gate and a method of manufacturing the same are provided to reduce a lithography process by forming a first gate and a second gate as a spacer. CONSTITUTION: A dual work-function gate(140) of a ring shape is formed on a semiconductor substrate. The dual work-function gate comprises a first gate(125) and a second gate(135). The first gate is adjacent to the area-source(150a). A second gate is contiguous to the drain region(150b). The impurity concentration of the first gate is lower than that of the second gate. The source and drain region are formed in both sides of the dual work-function gate. The first gate, the second gate, source and drain region have a same conductivity type.