METHOD FOR ETCHING A CARBON LAYER AND THE METHOD FOR FORMING A CONTACT HOLE USING THE SAME, CAPABLE OF REDUCING A THRESHOLD LINE WIDTH OF THE CONTACT HOLE

摘要

PURPOSE: A method for etching a carbon layer and the method for forming a contact hole using the same are provided to prevent the deterioration of a threshold line width of openings using an etch gas with a xenon gas and an oxygen gas.;CONSTITUTION: A capping film pattern is formed on a carbon layer(S120). The carbon layer is plasma-etched using an etch gas(S130). The etch gas includes oxygen and xenon. The carbon layer is exposed by the capping film pattern. The etch gas includes a xenon gas or mixture of the xenon and argon with the oxygen gas.;COPYRIGHT KIPO 2010