CONTACT HOLE FORMING METHOD OF A SEMICONDUCTOR DEVICE, CAPABLE OF STABLY FORMING A CONTACT HOLE IN A LINE WIDTH OF 30NM OR LESS

摘要

PURPOSE: A contact hole forming method of a semiconductor device is provided to form a contact hole in a uniform line width of 30nm or less by forming a first spacer in a stacked layer in which an oxide layer and a nitride layer are stacked.;CONSTITUTION: A hard mask layer is formed on an etched layer(12). The hard mask layer is selectively etched to define a plurality of contact holes, wherein the hard mask pattern(13A) comprises an opening. A spacer(18) is formed on the hard mask pattern sidewall and at the same time, an insulating layer(19B) insulating between the contact holes is formed. The etched layer is etched using the hard mask pattern, and the spacer and the insulating layer as an etching barrier.;COPYRIGHT KIPO 2010