首页> 外国专利> MANUFACTURING METHOD OF A HIGHLY PURE CUINSE2 THIN FILM AND A CUINSE2 THIN FILM FOR A SOLAR CELL MANUFACTURED BY THE SAME, CAPABLE OF IMPROVING THE PURITY OF A THIN FILM

MANUFACTURING METHOD OF A HIGHLY PURE CUINSE2 THIN FILM AND A CUINSE2 THIN FILM FOR A SOLAR CELL MANUFACTURED BY THE SAME, CAPABLE OF IMPROVING THE PURITY OF A THIN FILM

机译:用于制造由其制造的太阳能电池的高纯度Cuinse2薄膜和Cuinse2薄膜的制造方法,能够提高薄膜的纯度

摘要

PURPOSE: A manufacturing method of a highly pure CuInSe2 thin film and a CuInSe2 thin film for a solar cell manufactured by the same are provided to manufacture a thin film which has a fixed composition ratio despite evaporation under an argon state and a vacuum.;CONSTITUTION: A manufacturing method of a highly pure CuInSe2 thin film comprises following steps. A copper foil is formed on a substrate by depositing asymmetry copper precursor under an argon state and a vacuum through a chemical vapor deposition process. The asymmetry copper precursor including indium-selenium is continuously deposited under a mild condition of 350~450°C temperature in the argon state and a vacuum. The continuous deposition process is enabled over 40 minutes.;COPYRIGHT KIPO 2010
机译:目的:提供一种高纯度CuInSe2薄膜的制造方法和由其制造的用于太阳能电池的CuInSe2薄膜,以制造尽管在氩气状态和真空下蒸发但仍具有固定的组成比的薄膜。 :高纯度CuInSe 2薄膜的制造方法包括以下步骤。通过化学气相沉积工艺在氩气状态下和真空下沉积不对称铜前体,从而在基板上形成铜箔。包括铟-硒的不对称铜前体在氩气状态和真空下于350〜450℃的温和条件下连续沉积。连续沉积过程可以在40分钟内完成。; COPYRIGHT KIPO 2010

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