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method of producing high purity CuInSe2 Thin Films Prepared for solar cells and from the CuInSe2 Thin Films

机译:由太阳能电池制备的高纯度CuInSe2薄膜的制备方法以及由CuInSe2薄膜制备的方法

摘要

This invention is a copper thin film on a substrate by depositing a copper precursor having an asymmetric structure with a chemical vapor deposition method After manufacture, the copper thin film is formed on a substrate of indium-deposited continuously asymmetric precursor comprising selenium under mild temperature and time conditions, copper: indium: selenium, the proportion of 1: 1: single-phase high purity to meet the CuInSe 2 2 relates to a process for the production and from the prepared CuInSe 2 thin film of the thin film. ; the production method of the present invention using an asymmetric precursor chemical vapor by depositing by vapor deposition, in a predetermined relatively low temperature and shorter time than the prior art with no change in composition, and without introduction of impurities in high purity CuInSe 2 can be prepared a thin film, made of highly pure CuInSe 2 thin film can be applied usefully in the light absorbing film layer, quantum dots or the LED thin-film solar cell field. Furthermore, the invention of the high purity of CuInSe 2 thin-film solar cells are ultra-thin light-absorbing layer (Extremely Thin Absorber layer Solar cells, ETA Solar Cells) field to take you there.
机译:本发明是通过用化学气相沉积法沉积具有不对称结构的铜前驱体在基板上的铜薄膜。制造后,在温和的温度下,在包含硒的铟沉积的连续不对称前驱体的基板上形成铜薄膜。时间条件下,铜:铟:硒,比例为1:1:满足CuInSe 2 2 的单相高纯度涉及一种生产方法,并且由该方法制备的CuInSe 2 薄膜的薄膜。 ;使用不对称前体化学蒸气的本发明的制造方法,该蒸气通过在预定的相对较低的温度和比现有技术短的时间内通过气相沉积进行沉积,而组成没有变化,并且没有在高纯度CuInSe中引入杂质2 可以制备薄膜,由高纯度的CuInSe 2 薄膜制成,可以有效地应用于吸光膜层,量子点或LED薄膜太阳能电池领域。此外,高纯度的CuInSe 2 薄膜太阳能电池的发明是超薄的光吸收层(极薄的吸收层太阳能电池,ETA太阳能电池)领域带您去那里。

著录项

  • 公开/公告号KR101062398B1

    专利类型

  • 公开/公告日2011-09-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080096584

  • 发明设计人 심일운;옥강민;김신규;박종필;

    申请日2008-10-01

  • 分类号C23C16/06;C23C16/52;

  • 国家 KR

  • 入库时间 2022-08-21 17:49:50

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