SEMICONDUCTOR DEVICE WITH A VERTICAL CHANNEL TRANSISTOR AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF PREVENTING THE DETERIORATION OF A GATE INSULATION LAYER DUE TO DOPANT DIFFUSION

摘要

PURPOSE: A semiconductor device with a vertical channel transistor and a method for manufacturing the same are provided to improve the reliability of the semiconductor device by inserting a diffusion barrier between a gate electrode and an adhesive layer.;CONSTITUTION: A substrate includes a plurality of active pillars(22). Round shape vertical gate electrodes(26) surround each active pillar. A gate insulation layer(24) is interposed between the gate electrodes and the active pillar. Word-lines connect the neighboring gate electrodes. An adhesive layer(30A) is interposed between the word-lines and the gate electrodes. A dopant diffusion preventive layer(29A) is interposed between the adhesive layer and the gate electrodes.;COPYRIGHT KIPO 2010