SEMICONDUCTOR DEVICE WHICH INCLUDES A VERTICAL CHANNEL TRANSISTOR, CAPABLE OF PREVENTING THE DEGRADATION OF A TRANSISTOR PROPERTY, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the resistance of a bit line by forming impurity region for a bit line to the lower part of a semiconductor pillar.;CONSTITUTION: A semiconductor substrate(20) including a semiconductor pillar(200) is provided. A hard mask pattern(21) is formed on the semiconductor substrate. A surrounding gate electrode which surrounds the semiconductor pillar is formed. Impurity region(25) for a bit line is formed by doping impurity inside the semiconductor substrate. An element isolation trench is formed by etching the semiconductor substrate, where the impurity region for a bit line is formed, into a predetermined depth.;COPYRIGHT KIPO 2010