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NON-VOLATILE MEMORY DEVICE CAPABLE OF IMPROVING THE RELIABILITY BY COMPENSATING THE CHANGE OF A THRESHOLD VOLTAGE OF A FLASH MEMORY CELL, AND A READING METHOD THEREOF
NON-VOLATILE MEMORY DEVICE CAPABLE OF IMPROVING THE RELIABILITY BY COMPENSATING THE CHANGE OF A THRESHOLD VOLTAGE OF A FLASH MEMORY CELL, AND A READING METHOD THEREOF
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机译:可通过补偿闪存存储器的阈值电压的变化来提高可靠性的非易失性存储器及其读取方法
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摘要
PURPOSE: A non-volatile memory device and a reading method thereof are provided to compensate an increased threshold voltage by changing a read voltage and a reading reference voltage.;CONSTITUTION: A memory cell array is connected to a plurality of word lines. A voltage generator applies a selection read voltage to a selection word line(WL28) among the word lines during a reading operation state. The voltage generator applies a non-selection read voltage to a non-selection word line during the reading operation state. The voltage generator changes the level of the non-selection read voltage according to an adjacency state with the selection word line. The voltage generator supplies a non-selection read voltage which is lower than at least one non-selection read voltage among an upper word line(WL29) and a lower word line(WL27) when the threshold voltage of the selection memory cell is reduced.;COPYRIGHT KIPO 2010
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