PRECHARGE VOLTAGE GENERATING CIRCUIT AND A NONVOLATILE MEMORY DEVICE INCLUDING THE SAME, CAPABLE OF GENERATING A PRECHARGE VOLTAGE WHOSE LEVEL IS CHANGED IN PROPORTION TO A TEMPERATURE

摘要

PURPOSE: A precharge voltage generating circuit and a nonvolatile memory device including the same are provided to prevent wrong data recognition in a read operation at a low temperature by maintaining a precharge voltage as the higher level than that of a sensing voltage.;CONSTITUTION: A sensing transistor electrically connects a bit line and a page buffer through drain and source. A precharge voltage generating circuit(340) generates a precharge voltage whose level is changed in proportion to a temperature. A first resistance element(410) is connected between a high voltage supply terminal and a precharge voltage output terminal. A second resistance element(420) is connected between the precharge voltage output terminal and the low voltage supply terminal. The level of the precharge voltage is higher than that of the sensing voltage.;COPYRIGHT KIPO 2010