RESISTIVITY RANDOM ACCESS MEMORY DEVICE, WHICH INCLUDES AN IMPROVED THERMAL STABILITY

摘要

PURPOSE: A resistivity random access memory device is provided to steadily be driven in a high temperature by doping a material with the high oxygen affinity on a memory resistant layer in which information is stored.;CONSTITUTION: A memory resistor(11) is located between a first electrode(10) and a second electrode(12). The first electrode and the second electrode are formed with a conductive material. The memory resistor is a transition metal oxide in which metal with the high oxygen affinity is dopped. The metal has the oxygen affinity which is higher than that of the transition metal of the transition metal oxide. A switch structure is formed on the first electrode. A middle electrode is formed between the switch structure and the memory resistor.;COPYRIGHT KIPO 2010