CMP SLURRY COMPOSITION, FOR POLISHING A POLY-CRYSTAL SILICON LAYER, HAVING EXCELLENT POLISHING UNIFORMITY AND A POLISHING METHOD USING THEREOF

摘要

PURPOSE: A CMP slurry composition and a polishing method using thereof are provided to improve the polishing speed of poly-crystal silicon and to secure polishing selectivity for a polish-controlling oxide film.;CONSTITUTION: A CMP slurry composition for polishing a poly-crystal silicon layer contains ultrapure water, an abrasive, a surfactant, and a pH modifier. The surfactant is either a non-ionic surfactant or a gemini type surfactant. The non-ionic surfactant is an ethylene oxide/propylene oxide copolymer marked with chemical formula 1: HO[(CH2CH2O)x(CH(CH3)CH2O)y]H. In chemical formula 1, x and y are natural numbers of 1~40.;COPYRIGHT KIPO 2010