首页> 外国专利> SEMICONDUCTOR CHIP, A METHOD FOR MANUFACTURING THE SEMICONDUCTOR CHIP, AND A STACK PACKAGE, CAPABLE OF PROTECTING THE BACK SIDE OF A WAFER IN A CLEAVING PROCESS

SEMICONDUCTOR CHIP, A METHOD FOR MANUFACTURING THE SEMICONDUCTOR CHIP, AND A STACK PACKAGE, CAPABLE OF PROTECTING THE BACK SIDE OF A WAFER IN A CLEAVING PROCESS

机译:半导体芯片,一种制造半导体芯片的方法,以及一种堆叠式包装,能够在切割过程中保护晶片的背面

摘要

PURPOSE: A semiconductor chip, a method for manufacturing the semiconductor chip, and a stack package are provided to prevent the crack on the back side of a wafer by controlling the depth of a contact plug which is formed in a wafer.;CONSTITUTION: A hydrogen impurity(111) is inserted into a wafer(110). A semiconductor device(120) is formed on the wafer. A metal is electrically connected to the semiconductor device. A contact plug(162) passes through an insulating layer which is formed on the wafer. A wiring layer(170) is electrically connected to the contact plug and the metal.;COPYRIGHT KIPO 2010
机译:目的:提供一种半导体芯片,一种制造该半导体芯片的方法以及一种堆叠封装,以通过控制形成在晶片中的接触塞的深度来防止晶片背面破裂。将氢杂质(111)插入晶片(110)中。在晶片上形成半导体器件(120)。金属电连接到半导体器件。接触塞(162)穿过形成在晶片上的绝缘层。布线层(170)电连接到接触塞和金属。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100073430A

    专利类型

  • 公开/公告日2010-07-01

    原文格式PDF

  • 申请/专利权人 DONGBU HITEK CO. LTD.;

    申请/专利号KR20080132099

  • 发明设计人 JUNG OH JIN;

    申请日2008-12-23

  • 分类号H01L23/12;H01L23/48;H01L21/60;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:26

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