CMP SLURRY COMPOSITION FOR GRINDING METAL WIRES WITH THE LOW SURFACE DEFECT, AND A POLISHING METHOD USING THEREOF

摘要

PURPOSE: A CMP slurry composition for grinding metal wires with the low surface defect is provided to secure the fast polishing time, and to reduce the surface defect including the erosion and the dishing.;CONSTITUTION: A CMP slurry composition for grinding metal wires contains ultrapure water, an abrasive, an oxidizer, and a pH adjusting agent. The abrasive uses 0.5~3wt% of colloid silica with the first diameter of 30~70 nanometers for the total amount of slurry composition. The oxidizer contains 0.1~5wt% of peroxy compound selected from the group consisting of hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide, and ammonium peroxide. The pH of the CMP slurry composition is 2.3~3.;COPYRIGHT KIPO 2010