CMP SLURRY COMPOSITE AND A GRINDING METHOD THEREOF CAPABLE OF MINIMIZING SURFACE DEFECTS ON THE WHOLE GRINDED LAYER WHILE MAINTAINING MORE THAN 50 OF A GRINDING SPEED RATIO TO AN OXIDE FILM

摘要

PURPOSE: A CMP slurry composite and a grinding method thereof are provided to selectively adjust a grinding speed on a wafer surface composed of a convex part and a concave part and to enlarge the nitration film stopping of secondary grinding.;CONSTITUTION: A CMP slurry composite includes a metal oxide particle, a diisocyanate compound, and ultrapure water. The metal oxide particle is formed by calcination, flame oxidation, or thermal synthesis. The metal oxide particle is selected from a group composed of a ceria (CeO2) particle, a silica (SiO2) particle, an alumina (AI2O3) particle, a titania (TiO2) particle, and a zirconia (ZrO2) particle. A grinding method includes a step of grinding a semiconductor wafer by using the CMP slurry composite.;COPYRIGHT KIPO 2013