MANUFACTURING METHOD OF A POLY-CRYSTAL SILICON COMPRISING A CRYSTALLIZED SEMICONDUCTOR LAYER BY USING A METAL CATALYST, AND A THIN LAYER TRANSISTOR AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A manufacturing method of a poly-crystal silicon, a thin layer transistor, a manufacturing method thereof, and an organic electronic light emitting display device are provided to implement a thin layer transistor with improved a threshold voltage by controlling the concentration of the metallic catalyst of a semiconductor layer.;CONSTITUTION: A buffer layer(110) is formed on a substrate(100). A first semiconductor layer(160) and a second semiconductor layer(170) are formed on the buffer layer. A gate electrode(185) is insulated from the first semiconductor layer and the second semiconductor layer. A gate insulating layer(180) insulates the semiconductor layer and the second semiconductor layer from the gate electrode. Source/drain electrode is connected to a part of the second semiconductor layer.;COPYRIGHT KIPO 2010