METHOD FOR MANUFACTURING A POLY-CRYSTALLIZATION SILICON LAYER USING A METALLIC CATALYST, A METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR INCLUDING THE SAME, A THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, AND AN ORGANIC LIGHT EMITTING APPARATUS INCLUDING A THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a poly-crystallization silicon layer, a method for manufacturing a thin film transistor including the same, a thin film transistor manufactured by the same, and an organic light emitting apparatus including a thin film transistor are provided to improve the electrical characteristic of a thin film transistor by reducing the dynamic range dispersion of the thin film transistor.;CONSTITUTION: A buffer layer(110a) is formed on a substrate. The buffer layer is processed by hydrogen plasma. An amorphous silicon layer(120) is formed on the buffer layer. A metal catalytic layer(140) for crystallization is formed on the amorphous silicon layer. The amorphous silicon layer is crystallized to the polycrystalline silicon layer by a thermal process.;COPYRIGHT KIPO 2012