首页> 外国专利> Thin film transistor substrate, organic light-emitting apparatus including the same, method of manufacturing the thin film transistor substrate, and method of manufacturing the organic light-emitting apparatus

Thin film transistor substrate, organic light-emitting apparatus including the same, method of manufacturing the thin film transistor substrate, and method of manufacturing the organic light-emitting apparatus

机译:薄膜晶体管基板,包括该薄膜晶体管基板的有机发光装置,该薄膜晶体管基板的制造方法以及该有机发光装置的制造方法

摘要

A thin film transistor (TFT) substrate which may facilitate subsequent TFT processing by reducing an elevation difference on the top surface of the substrate is disclosed. Aspects include an organic light-emitting apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the organic light-emitting apparatus. In one aspect the TFT substrate includes: a substrate; a height adjusting layer that is disposed on the substrate and has a thickness in a first region greater than a thickness in a second region; and a TFT that is formed on the height adjusting layer to correspond to the second region of the height adjusting layer.
机译:公开了一种薄膜晶体管(TFT)基板,其可以通过减小基板的顶表面上的高度差来促进后续的TFT处理。方面包括包括TFT基板的有机发光装置,制造TFT基板的方法以及制造有机发光装置的方法。一方面,TFT基板包括:基板;和高度调节层,设置在所述基板上,所述第一区域的厚度大于第二区域的厚度。 TFT,其形成在高度调节层上以对应于高度调节层的第二区域。

著录项

  • 公开/公告号US9595694B2

    专利类型

  • 公开/公告日2017-03-14

    原文格式PDF

  • 申请/专利权人 SAMSUNG DISPLAY CO. LTD.;

    申请/专利号US201314013871

  • 发明设计人 DONG-WON LEE;

    申请日2013-08-29

  • 分类号H01L27/32;H01L51/56;H01L29/66;H01L29/786;H01L27/12;

  • 国家 US

  • 入库时间 2022-08-21 13:44:34

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