Structure For Crystallization, Method of Crystallization, Method of Forming Active layer of Semiconductor Amorphous silicon layer, And Manufacturing Method of Thin Film Transistor Using the Same

摘要

invention Localization crystal structure , crystallization method , and a semiconductor active layer formed using this method and a method for forming a thin film transistor relates , determined for Localization of the support structure is plate-like and plate-like on the support having a lower part provided with a projection doedoe having a flat lower surface a plurality of spaced apart at a predetermined distance from each other , is applied to the lower surface temperature is heated by accessing the object when the temperature of the bottom surface is higher than the temperature of the support .