MIM CAPACITOR CAPABLE OF REDUCING THE LEVEL DIFFERENCE GENERATING IN A MIM CAPACITOR MANUFACTURE PROCESS, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A MIM capacitor and a manufacturing method thereof are provided to uniformly keep the level difference of the following superstructure by manufacturing the MIM capacitor by filling a dielectric layer and a top metal line to the down metal wiring.;CONSTITUTION: A bottom metal layer(300) is formed on a semiconductor substrate. The formed bottom metal layer is patterned and a trench is formed in MIM capacitor defined area. A buried type MIM capacitor is formed by forming a dielectric layer and an upper metal layer into a buried type inside the formed trench. An plurality of metal wiring layers(310a,312a,312b) electrically connected on the top of the formed imbedded MIM capacitor is formed. A polishing stop layer is formed on the top of the formed bottom metal clad after forming the bottom metal layer.;COPYRIGHT KIPO 2010