MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same

摘要

A MIM capacitor includes a bottom electrode, a middle electrode disposed over the bottom electrode, a top electrode disposed over the middle electrode, a first dielectric layer sandwiched between the bottom electrode and the middle electrode, and a second dielectric layer sandwiched between the middle electrode and the top electrode. A surface of the bottom electrode and a surface of the top electrode respectively comprise a Ra value lower than 0.35 nm and a Rq value lower than 0.4 nm.