THIN FILM TRANSISTOR REDUCING A CONTACT RESISTANCE OF SOURCE AND DRAIN ELECTRODES AND AN OXIDE SEMICONDUCTOR LAYER, AND A FLAT DISPLAY DEVICE INCLUDING THE SAME

摘要

PURPOSE: A thin film transistor and a flat display device including the same are provided to implement a large flat display device with high image quality by improving a current-voltage property by a copper wiring with small resistivity by interposing a titanium layer between the source and drain electrodes and the oxide semiconductor layer.;CONSTITUTION: A gate electrode(12) is formed on a substrate(10). A gate insulation layer(13) is formed on the upper side including the gate electrode. An oxide semiconductor layer(14) is formed on the gate insulation layer including the gate electrode. A titanium layer(15) is formed on a source area(14a) and a drain area(14b) of the oxide semiconductor layer. A source electrode(16a) and a drain electrode(16b) are connected to the source region and the drain region through the titanium layer.;COPYRIGHT KIPO 2010