METHOD FOR FORMING METAL SILICIDE LAYER OF SEMICONDUCTOR DEVICE COMBINING JUST DRY ETCHING AND CHEMICAL DRY ETCHING

摘要

PURPOSE: A metal silicide layer formation method of a semiconductor device with chemical dry etching and a just dry etching is provided to prevent the distribution poor with a center value of a gate resistance upturned by preventing excessive etching in an oxide recess. CONSTITUTION: A gate structure(120) of line and space form is formed on a semiconductor substrate(100). An oxide film(130) is added in a front side of the semiconductor substrate with a gate structure formed. A stopping layer(140) is added in the front side of the oxide film to a blanket mode. An inter-layer insulating film is added in the front side of the stopper film. The insulating layer is ground to the surface of the stopper film.