首页> 外国专利> METHOD FOR DISTINGUISHING AN UNCERTAIN LOCATION OF A SEMICONDUCTOR WAFER IN A THERMAL PROCESS INSIDE A PROCESS CHAMBER WITH AN INFRARED RAY TRANSMISSION PROPERTY

METHOD FOR DISTINGUISHING AN UNCERTAIN LOCATION OF A SEMICONDUCTOR WAFER IN A THERMAL PROCESS INSIDE A PROCESS CHAMBER WITH AN INFRARED RAY TRANSMISSION PROPERTY

机译:区分具有红外透射特性的过程腔室内热过程中半导体晶片的不确定位置的方法

摘要

PURPOSE: A method for distinguishing an uncertain location of a semiconductor wafer in a thermal process is provided to confirm and remove a defect by determining an actual position of the semiconductor wafer.;CONSTITUTION: A semiconductor wafer(1) is arranged on a circular pocket(3) of a rotary susceptor(2). A preset temperature is maintained with an infrared radiator and a control system and a heat radiation is measured by a pyrometer(7). The variation of the amplitude of the measured signal is determined. If a binary width exceeds the preset maximum value, it is regarded as the semiconductor wafer is incorrectly positioned. A measurement point measured by the pyrometer is partially oriented on the semiconductor wafer and the susceptor outside the semiconductor wafer. The incorrect position is set with the eccentric state in the pocket of the susceptor.;COPYRIGHT KIPO 2011
机译:目的:提供一种在热处理过程中区分半导体晶片不确定位置的方法,通过确定半导体晶片的实际位置来确认和消除缺陷。;组成:将半导体晶片(1)放置在圆形口袋中(3)旋转基座(2)。用红外辐射器和控制系统保持预设温度,并通过高温计(7)测量热辐射。确定被测信号的幅度变化。如果二进制宽度超过预设最大值,则认为半导体晶片被错误地定位。由高温计测量的测量点部分地定向在半导体晶片和基座上,该基座在半导体晶片的外部。基座的口袋中的偏心状态设置了不正确的位置。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100097006A

    专利类型

  • 公开/公告日2010-09-02

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号KR20100002778

  • 发明设计人 GRUENDL KONRAD;BRENNINGER GEORG;

    申请日2010-01-12

  • 分类号H01L21/683;H01L21/66;H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:02

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