Simple method for the determination of the effective infrared absorption coefficient of semiconductor wafer using modulated photothermal infrared radiometry

摘要

A simple method for the estimation the infrared absorption coefficient of semiconductor wafers is proposed which is based on the photothermal infrared radiometry (PTR) measurement technique. Applying the method on Si and GaAs wafers which have been studied recently it is shown that information about the infrared absorption coefficient can be deduced from the slope of the PTR amplitudes. The obtained results are in a good agreement with values obtained using computational method reported recently.