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SEMICONDUCTOR DEVICE MANUFACTURING METHOD HAVING A RECESS CHANNEL MOS TRANSISTOR, CAPABLE OF FORMING A STABLE AND RELIABLE RECESS CHANNEL MOS TRANSISTOR
SEMICONDUCTOR DEVICE MANUFACTURING METHOD HAVING A RECESS CHANNEL MOS TRANSISTOR, CAPABLE OF FORMING A STABLE AND RELIABLE RECESS CHANNEL MOS TRANSISTOR
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机译:具有近沟道MOS晶体管的半导体器件制造方法,能够形成稳定可靠的近沟道MOS晶体管
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摘要
PURPOSE: A semiconductor device manufacturing method is provided to prevent a silicon residual, or silicon walls from remaining in the edge part of a gate trench which is contacted with an element isolation region.;CONSTITUTION: A semiconductor device manufacturing method forms an element isolation region confining an activated region. A mask pattern has an opening crossing the activated region. The mask pattern(10) includes an oxide film having an insulation property. A back-up gate trench(15) is formed by etching an exposed activated region with the opening. Semiconductor walls remains in the side walls of the back-up gate trench, which face each other with being contacted with the element isolation region.;COPYRIGHT KIPO 2011
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