Quantum trap nonvolatile memory device

摘要

About the commencement of the non-volatile memory device and SONONOS or BE-SONOS structure. Non-volatile memory device according to the present invention and an ONO film, ONO film and the nitride film formed on the tunnel traps, and traps formed on the blocking oxide nitride film, and a gate formed on the blocking oxide layer. Blocking oxide film SiO ₂ than the dielectric constant of the film consists of a high intrinsic conductive film. The gate is made of metal.