Extreme UltraViolet mask and method for fabricating the same

摘要

An EUV mask comprises a multi-reflecting layer is formed over a substrate and reflecting EUV light; an absorber layer pattern defining a sidewall formed over the multi-reflecting layer formed and selectively exposing a region of the multi-reflecting layer; and a reflecting spacer which additionally reflects the EUV light at the sidewall of the absorber layer pattern.