PATTERN FORMING METHOD, EXTREME ULTRAVIOLET EXPOSURE MASK, METHOD OF MANUFACTURING EXTREME ULTRAVIOLET EXPOSURE MASK, AND METHOD OF CORRECTING EXTREME ULTRAVIOLET EXPOSURE MASK

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern which decreases reflectivity of EUV light with a less dose amount.;SOLUTION: The pattern forming method includes: a film forming process for forming a high-absorption film 14, which has high absorption coefficient of an extreme ultraviolet ray and lowers an etching speed when mixed with an outermost layer of a multilayer reflection film 12, on the multilayer reflection film 12 on a substrate 10 having the multilayer reflection film 12 which can reflect the extreme ultraviolet ray; a mixing process for generating a second mixing layer 32 and a first mixing layer 31, in which the outermost layer and the high-absorption film 14 are mixed, between at least the outermost layer and high absorption film 14 by irradiating ion beams 20 on the high absorption film 14, and an etching process for removing a component of the high absorption film 14 except for the second mixing layer 32 by etching after the mixing process, and exposing the outermost layer of the multilayer reflection film 12 and the second mixing layer 32.;COPYRIGHT: (C)2011,JPO&INPIT