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ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN ?????Si UNDER BIAXIAL COMPRESSIVE STRAIN
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN ?????Si UNDER BIAXIAL COMPRESSIVE STRAIN
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机译:双向压应力作用下硅中电子和空穴运动的增强
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摘要
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a 110 crystal orientation and a biaxial compressive strain. The term biaxial compressive stress is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.
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