High Electron and Hole Mobility By Localized Tensile Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge Ge+Sn)

摘要

This paper will review strain-Si and strain-Ge formation by ion implantation and advanced annealing to form localized tensile and compressive strain channel for improved electron and hole mobility in Group IV materials. Carbon implant was used to reduce the surface Si lattice constant forming Si+C material for localized compressive strain-Si channel. Ge implant was used to increase the surface Si lattice constant forming Si+Ge material for localized tensile strain-Si channel and Sn implant to increase the surface Ge lattice constant forming Ge+Sn material for localized tensile strain-Ge channel. Use of ion implant and advanced annealing for strain formation resulted in tensile strain-Si+Ge improving hole mobility by 4x and electron mobility by 1.5x while tensile strain-Ge+Sn improved electron mobility by 2-2.5x.