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Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures

机译:石墨烯/氮化硼异质结构中的双轴压缩应变工程

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摘要

Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.
机译:据预测,应变工程石墨烯将显示许多有趣的物理和设备应用。在这里,我们研究石墨烯/六方氮化硼异质结构在热循环至高温后的双轴压缩应变,这可能是由于它们的热膨胀系数不匹配所致。亚微米自支撑气泡的出现表明该应变在空间上是不均匀的。有限元建模表明,应变集中在具有规则纳米级皱纹的边缘上,这可能是石墨烯中应变工程的场所。拉曼光谱法和作图法用于定量探测应变的大小和分布。从拉曼G和2D峰随温度的变化,我们首次估计了石墨烯的TEC从室温到1000K以上。

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