Double exposure apparatus for photolithography process and double exposure method using thereof

摘要

PURPOSE: A double exposure apparatus and a double exposure method using the same are provided to accurately expose a desired pattern on a wafer by preventing an alignment error of first and second reticles during first and second exposures of the wafer. CONSTITUTION: A light source supplies the light of a preset wavelength. A first reticle stage(20) forms a specific circuit pattern for printing on a wafer. A second reticle formed with the specific circuit pattern for printing on the wafer is settled on a second reticle stage. A second reticle stage(30) is located on the top of the first reticle stage. A projection lens(40) transfers the light which passed through the first reticle or the second reticle to a specific part of the wafer. A first alignment mark aligns the mutual locations of the first reticle stage and the wafer stage. A second alignment mark aligns the mutual locations of the first reticle stage, the second reticle stage, and the wafer stage. A wafer stage aligning part aligns the locations of the first reticle stage or the second reticle stage. A mobile tool(35) is connected to the first and second reticle stages. A moving unit moves the first and second reticle stages to a desired direction.