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Apparatus and method for measuring temperature of wafer in Rapid Thermal Processor

机译:快速热处理器中用于测量晶片温度的设备和方法

摘要

PURPOSE: An apparatus and a method for measuring temperature of a wafer in a rapid thermal processor are provided to help a user to measure a temperature of a wafer accurately by using a pyrometer. CONSTITUTION: In a device, a heating lamp(10) on the top of the wafer heat a wafer. A pyrometer(30) is the lower part of the wafer and measures the temperature of wafer. A temperature control start decision unit(70) detects a first vertex which is convex upwardly and a second vertex which is convex downwardly from a measured temperature of a pyrometer. A temperature control starting decision unit outputs a temperature control starting instruction. A temperature control unit(40) controls power supplied to a heating lamp according to temperature control starting instruction. A low-pass filter(60) removes noises of a thermograph measured at the pyrometer.
机译:目的:提供一种用于在快速热处理器中测量晶片温度的设备和方法,以帮助用户通过使用高温计准确地测量晶片的温度。组成:在一种设备中,晶片顶部的加热灯(10)会加热晶片。高温计(30)是晶片的下部,用于测量晶片的温度。温度控制开始判定单元(70)从高温计的测量温度检测向上凸出的第一顶点和向下凸出的第二顶点。温度控制开始判定单元输出温度控制开始指令。温度控制单元(40)根据温度控制开始指令控制提供给加热灯的功率。低通滤波器(60)去除在高温计处测得的热像仪的噪声。

著录项

  • 公开/公告号KR100974013B1

    专利类型

  • 公开/公告日2010-08-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080056381

  • 发明设计人 지상현;

    申请日2008-06-16

  • 分类号H01L21/66;H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-21 18:30:58

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