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Wafer temperature measuring device of rapid thermal processing equipment and temperature measuring method using the same

机译:快速热处理设备的晶片温度测量装置及其使用的温度测量方法

摘要

Disclosed are a wafer temperature measuring apparatus and a temperature measuring method using the same in a rapid heat treatment facility.;The rapid thermal processing apparatus according to the present invention includes an emitter pyrometer, a high temperature pyromite, and a low temperature pyromite as a wafer temperature measuring means. Using these means, temperature calibration is carried out so as to perform temperature compensation of a wafer whose radiation is unknown in the high temperature region and the low temperature region based on 650 ° C.;As a result, the high temperature and low temperature heat treatment process can be carried out using a single RTP chamber, thereby increasing the use efficiency of the equipment and enabling accurate temperature measurement of the RTP wafers in the low and high temperature ranges. The wafer can be heat-treated in an optimal state to improve the quality and reliability of the semiconductor device.
机译:公开了一种晶片温度测量装置和在快速热处理设备中使用该晶片温度测量方法的温度测量方法。根据本发明的快速热处理装置包括发射体高温计,高温黄铁矿和低温黄铁矿作为加热装置。晶片温度测量装置。使用这些手段,进行温度校准以基于650℃对在高温区域和低温区域中辐射未知的晶片执行温度补偿;结果,高温和低温热可以使用单个RTP腔室进行处理工艺,从而提高设备的使用效率,并能够在低温和高温范围内精确测量RTP晶片的温度。可以以最佳状态对晶片进行热处理,以提高半导体器件的质量和可靠性。

著录项

  • 公开/公告号KR19980067037A

    专利类型

  • 公开/公告日1998-10-15

    原文格式PDF

  • 申请/专利权人 김광호;

    申请/专利号KR19970002882

  • 发明设计人 이응준;최길현;김병준;

    申请日1997-01-30

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 02:47:46

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