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Wafer temperature measuring device of rapid thermal processing equipment and temperature measuring method using the same
Wafer temperature measuring device of rapid thermal processing equipment and temperature measuring method using the same
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机译:快速热处理设备的晶片温度测量装置及其使用的温度测量方法
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摘要
Disclosed are a wafer temperature measuring apparatus and a temperature measuring method using the same in a rapid heat treatment facility.;The rapid thermal processing apparatus according to the present invention includes an emitter pyrometer, a high temperature pyromite, and a low temperature pyromite as a wafer temperature measuring means. Using these means, temperature calibration is carried out so as to perform temperature compensation of a wafer whose radiation is unknown in the high temperature region and the low temperature region based on 650 ° C.;As a result, the high temperature and low temperature heat treatment process can be carried out using a single RTP chamber, thereby increasing the use efficiency of the equipment and enabling accurate temperature measurement of the RTP wafers in the low and high temperature ranges. The wafer can be heat-treated in an optimal state to improve the quality and reliability of the semiconductor device.
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