Method of growing GaN layer for manufacturing Light Emitting Diode, Method of manufacturing Light Emitting Diode using the same, and Light Emitting Diode device thereof

摘要

PURPOSE: A method of growing a Gan layer for manufacturing a light emitting diode, method of manufacturing the light emitting diode using the same, and the light emitting diode device thereof are provided to increase a light extraction area by growing nitride gallium film to be a double-layer. CONSTITUTION: A GaN thin film(20) is formed on a substrate(10). An insulating layer pattern(30) defining an aperture pattern exposing the surface of the gallium nitride film into by a polygon. At this time, the insulating layer pattern is formed so that the preference crystal growth direction(1000 direction) naturally is not accord GaN to the direction interlinking center and vertex of polygon. A first nitride gallium film(51) is selectively grown until a new crystal plane is appeared on the vertex of an opening pattern by using insulating layer pattern as a mask. The surface of the first nitride gallium film is processed through a nitrate heat treatment.