METHOD OF ELECTRICALLY INSULATED SILICON REGIONS FORMATION IN BULK OF SILICON WAFER

摘要

FIELD: electricity.;SUBSTANCE: method involves notching in bulk of a silicon wafer and silicone removing from the wafer back to uncover notch bottoms. Notching enables silicone pattern formation to represent hollow cell walls that is followed with wall-through oxidation to form a dielectric SiO₂ conduit system. Silicon removing from the back of the wafer can be conducted by the deep plasma etch process.;EFFECT: high strength of the insulating element which can be used for manufacturing various MEMS devices in bulk of a standard silicon wafer.;2 cl, 13 dwg