Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation

摘要

This experimental work demonstrated that the low-temperature (25 ℃) hydrogen ion-beam treatment has led to the formation of an oxygen-containing nanolayer at the surface of standard commercial p- and n-type Czochralski-grown (Cz) Si wafers. The measurements of I-V and C-V characteristics have shown that this layer has insulating properties, its resistivity ≈5 × 10~(12) Ω cm. It was suggested that the formation of such an insulating layer might be related to the highly distorted region under the wafer surface due to the incorporation of high dose of hydrogen and its low diffusivity into the bulk at low-temperatures.