A method for determining an optimum absorber - layers stack geometry for a lithographic a reflection mask

摘要

A method for determining an optimum absorber - layers stack geometry of a lithographic a reflection mask (31) comprising a reflective layer (5) and a on the reflection layer (5) arranged structured absorber - layer stack (12; 22; 32), comprising a buffer layer (14; 24; 34) and an absorber layer (13; 23; 33) comprising:a) determining a desired structure for a structure to be imaged on a substrate with the aid of an illumination unit, which the lithographic a reflection mask (31) for reflecting a radiation, wherein the desired structure of a range of critical feature sizes with desired values for the critical feature sizes comprises;b) determining an absorber - layers stack geometry for the desired structure, wherein a value for at least one absorber - layers stack parameter is determined, wherein the absorber - layers stack parameter is a buffer layer thickness, a buffer layer - edge angle, an absorber layer, an absorber layer - edge angle and a lateral absorber layers stack size comprises;c) a simulation of the aerial on the substrate structure to be imaged for determining a predetermined range of defocus values;d) evaluating each aerial image by applying a predetermined range of intensity limit values to determine a corresponding critical structure sizes values for the on..