首页>
外国专利>
Method for determining an optimal absorber stack geometry of a lithographic reflection mask
Method for determining an optimal absorber stack geometry of a lithographic reflection mask
展开▼
机译:确定光刻反射掩模的最佳吸收体堆叠几何形状的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating aerial images for different absorber stack geometries in order to determine process windows corresponding to the absorber stack geometries. The optimal absorber stack geometry is identified by the maximum process window size. The invention further relates to a method for fabricating a lithographic reflection mask and to a lithographic reflection mask.
展开▼